LET (Laser & Etching Technology) for TGV Glass Substrate Processing
Proprietary picosecond laser + wet etching process for forming TGV through-holes in glass substrates, achieving aspect ratios up to 9:1, positional accuracy ±10μm, and supporting straight, hourglass, and tapered via profiles for 2.5D/3D packaging and glass interposer applications.
Problem solved
The difficulty of forming high-quality, crack-free TGV micro-vias in glass substrates for advanced semiconductor packaging, particularly the trade-off between positional accuracy, via profile control, and substrate damage.
Application contexts
- Glass interposers for 2.5D/3D chiplet packaging
- Semiconductor manufacturing equipment insulating parts (gas shower plates)
- Microfluidic devices with glass through-holes
- RF/microwave modules requiring low-loss glass substrates
Technical principle
A picosecond laser beam creates modified regions within the glass volume along the intended via path. The modified glass etches preferentially in a subsequent wet chemical bath, forming a through-hole. The laser modification pattern and etching parameters control the via profile (straight, hourglass, or tapered). The process works on multiple glass types (alkali-free, quartz, borosilicate, soda-lime) without inducing microcracks.
Typical use cases
- TGV via array formation for glass interposer in chiplet-based AI processors
- Fine-pitch vertical interconnect for 2.5D glass-core substrate prototypes
- Glass insulating components with shaped through-holes for semiconductor etch/CVD equipment
Partnership route
How global engineering teams typically engage this asset.
Helpful to include: Maximum TGV via density achievable on 370×470mm panel · Via wall roughness (Ra/Rz) and its impact on Cu plating adhesion · Current positional accuracy Cpk data · Processing time per panel and estimated cost for pilot quantities
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- Source: ガラスへの微細貫通孔加工(TGV)や真円微細加工技術
- Original language: JA
- Summary AI-assisted; translation status: Unreviewed