Through-Glass Via Wafer Processing for 3D WLP and RF Applications
Precision TGV formation on borosilicate/alkali-free glass wafers (≤φ200mm) enabling hermetic vertical interconnects with low stray capacitance and high-frequency performance.
Problem solved
Conventional TSV or organic substrates suffer from higher parasitic capacitance, thermal mismatch, or outgassing in miniaturized RF/MEMS and 3D packaged devices for AI edge or sensor modules.
Application contexts
- rf-mems-switches
- image-sensors
- pressure-gyro-accel-sensors
- wl-csp-mems-packaging
- high-frequency-interposers
Technical principle
Laser or chemical formation of straight vias (min φ0.15mm, aspect 1:5) followed by metal fill (Si/W) or plating, anodic bonding compatibility, hermetic sealing verified by He leak test.
Typical use cases
- RF switch/relay modules in smartphones and automotive sensors
- Hermetic MEMS sensor packages for medical or industrial IoT
Partnership route
How global engineering teams typically engage this asset.
Helpful to include: target via diameter/pitch/aspect ratio · wafer size and glass type preference · required hermeticity or electrical specs · volume and timeline · metallization or post-process needs
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- Source: Through glass via (TGV)｜TECNISCO,LTD.
- Original language: ENGLISH
- Summary AI-assisted; translation status: Unreviewed